1.5ka6.8 thru 1.5ka47a document number 88300 16-aug-05 vishay semiconductors www.vishay.com 1 * patent #'s 4,980,315 5,166,769 5,278,094 p a t e n t e d * case style 1.5ka automotive transient voltage suppressors high temperature st ability & high reliability conditions major ratings and characteristics v (br) 6.8 v to 47 v p ppm 1500 w p d 5.0 w i fsm 200 a t j max. 185 c features ? patented par ? construction ? available in unidirectional polarity only ? 1500 w peak pulse pow er capability with a 10/1000 s waveform ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? typical i d less than 1.0 a above 15 v rating ? solder dip 260 c, 40 seconds typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication mechanical data case: molded plastic body over passivated junction epoxy meets ul-94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade, he3 suffix for high reliability grade (aec q101 qualified) polarity: color band denotes cathode end maximum ratings (t a = 25 c, unless otherwise noted) notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minutes maximum parameter symbol limit unit peak pulse power diss ipation with a 10/1000 s waveform (1) (fig. 1) p ppm minimum 1500 w peak pulse current at t a = 25 c with a 10/1000 s waveform (1) (fig. 3) i ppm see next table a power dissipation on infi nite heatsink at t l = 75 c (fig. 5) p d 5.0 w peak forward surge current 8.3 ms single half sine-wave (2) i fsm 200 a maximum instantaneous forward voltage at 100 a (2) v f 3.5 v operating junction and storage temperature range t j , t stg - 65 to + 185 c
www.vishay.com 2 document number 88300 16-aug-05 1.5ka6.8 thru 1.5ka47a vishay semiconductors electrical characteristics (t a = 25 c unless otherwise noted) notes: (1) v (br) measured after i t applied for 300 s = square wave pulse or equivalent (2) surge current waveform per fig. 3 and derate per fig. 2 (3) all terms and symbols are consistent with ansi/ieee c62.35 device type breakdown voltage v (br) (1) at i t (v) te s t current i t (ma) stand-off voltage v wm (volts) maximum reverse leakage at v wm i d (a) t j = 150 c maximum reverse leakage at v wm i d (a) peak pulse current i ppm (2) (amps) maximum clamping voltage at i ppm v c (volts) maximum te m p. coefficient of v (br) (% / c) min max 1.5ka6.8 6.12 7.48 10 5.50 1000 10000 139 10.8 0.057 1.5ka6.8a 6.45 7.14 10 5.80 1000 10000 143 10.5 0.057 1.5ka7.5 6.75 8.25 10 6.05 500 5000 128 11.7 0.061 1.5ka7.5a 7.13 7.88 10 6.40 500 5000 133 11.3 0.061 1.5ka8.2 7.38 9.02 10 6.63 200 2000 120 12.5 0.065 1.5ka8.2a 7.79 8.61 10 7.02 200 2000 124 12.1 0.065 1.5ka9.1 8.19 10.0 1.0 7.37 50 500 109 13.8 0.068 1.5ka9.1a 8.65 9.55 1.0 7.78 50 500 112 13.4 0.068 1.5ka10 9.00 11.0 1.0 8.10 20 200 100 15.0 0.073 1.5ka10a 9.50 10.5 1.0 8.55 20 200 103 14.5 0.073 1.5ka11 9.90 12.1 1.0 8.92 5.0 50 92.6 16.2 0.075 1.5ka11a 10.5 11.6 1.0 9.40 5.0 50 96.2 15.6 0.076 1.5ka12 10.8 13.2 1.0 9.72 2.0 10 86.7 17.3 0.076 1.5ka12a 11.4 12.6 1.0 10.2 2.0 10 89.8 16.7 0.078 1.5ka13 11.7 14.3 1.0 10.5 2.0 10 78.9 19.0 0.081 1.5ka13a 12.4 13.7 1.0 11.1 2.0 10 82.4 18.2 0.081 1.5ka15 13.5 16.3 1.0 12.1 1.0 10 68.2 22.0 0.084 1.5ka15a 14.3 15.8 1.0 12.8 1.0 10 70.8 21.2 0.084 1.5ka16 14.4 17.6 1.0 12.9 1.0 10 63.8 23.5 0.086 1.5ka16a 15.2 16.8 1.0 13.6 1.0 10 66.7 22.5 0.086 1.5ka18 16.2 19.8 1.0 14.5 1.0 10 56.6 26.5 0.088 1.5ka18a 17.1 18.9 1.0 15.3 1.0 10 59.5 25.2 0.088 1.5ka20 18.0 22.0 1.0 16.2 1.0 10 51.5 29.1 0.090 1.5ka20a 19.0 21.0 1.0 17.1 1.0 10 54.2 27.7 0.090 1.5ka22 19.8 24.2 1.0 17.8 1.0 10 47.0 31.9 0.092 1.5ka22a 20.9 23.1 1.0 18.8 1.0 10 49.0 30.6 0.092 1.5ka24 21.6 26.4 1.0 19.4 1.0 10 43.2 34.7 0.094 1.5ka24a 22.8 25.2 1.0 20.5 1.0 10 45.2 33.2 0.094 1.5ka27 24.3 29.7 1.0 21.8 1.0 10 38.4 39.1 0.096 1.5ka27a 25.7 28.4 1.0 23.1 1.0 10 40.0 37.5 0.096 1.5ka30 27.0 33.0 1.0 24.3 1.0 10 34.5 43.5 0.097 1.5ka30a 28.5 31.5 1.0 25.6 1.0 10 36.2 41.4 0.097 1.5ka33 29.7 36.3 1.0 26.8 1.0 10 31.4 47.7 0.098 1.5ka33a 31.4 34.7 1.0 28.2 1.0 10 32.8 45.7 0.098 1.5ka36 32.4 39.6 1.0 29.1 1.0 10 28.8 52.0 0.099 1.5ka36a 34.2 37.8 1.0 30.8 1.0 10 30.1 49.9 0.099 1.5ka39 35.1 42.9 1.0 31.6 1.0 10 26.6 56.4 0.100 1.5ka39a 37.1 41.0 1.0 33.3 1.0 10 27.8 53.9 0.100 1.5ka43 38.7 47.3 1.0 34.8 1.0 20 24.2 61.9 0.101 1.5ka43a 40.9 45.2 1.0 36.8 1.0 20 25.3 59.3 0.101 1.5ka47 42.3 51.7 1.0 38.1 1.0 20 22.1 67.8 0.101 1.5ka47a 44.7 49.4 1.0 40.2 1.0 20 23.1 64.8 0.101
1.5ka6.8 thru 1.5ka47a document number 88300 16-aug-05 vishay semiconductors www.vishay.com 3 ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. peak pulse power rating curve figure 2. pulse power or curr ent versus initial junction temperature figure 3. pulse waveform 0.1 1.0 10 100 n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c 0.1 s 1.0 s 10 s 100 s 1.0 s 10 s td - p u lse w idth (sec.) p ppm - peak p u lse po w er (k w ) 0 25 50 75 100 0 75 25 50 100 125 150 175 200 peak p u lse po w er (p pp )orc u rrent (i pp ) derating in percentage, % t j - initial temperat u re (c) 0 50 100 150 i ppm -peakp u lse c u rrent, % i rsm half v al u e - ipp i ppm 2 td 10/1000 sec. w a v eform as defined b y r.e.a. 0 1.0 2.0 3.0 4.0 t - time (ms) t j = 25 c p u lse w idth (td) is defined as the point w here the peak c u rrent decays to 50 % of i ppm tr = 10 sec. peak v al u e i ppm figure 4. typical junction capacitance unidirectional figure 5. power derating curve figure 6. maximum non-repetitive/peak forward surge current meas u red at zero bias meas u red at stand-of v oltage, v w m t j =25 c f = 1.0 mhz v sig = 50 m v p-p 10 1.0 100 v (br) - breakdo w n v oltage ( v ) c j -j u nction capacitance (pf) 100 1000 10000 20000 0 1.25 2.5 3.75 5.0 0 75 25 100 125 150 175 200 50 p d , po w er dissipation ( w ) t l - lead temperat u re (c) l = 0.375? (9.5 mm) lead lengths 60 hz resisti v e or ind u cti v e load 1 10 100 i fsm -peakfor w ard s u rge c u rrent (a) nu m b er of cycles at 60h z 10 100 200 t l = 75 c 8 .3 ms single half sine- w a v e
www.vishay.com 4 document number 88300 16-aug-05 1.5ka6.8 thru 1.5ka47a vishay semiconductors package outline dime nsions in inches (millimeters) 1.0 (25.4) min. 1.0 (25.4) min. 0.375 (9.5) 0.285 (7.2) 0.210 (5.3) 0.190 (4.8) dia. 0.042 (1.07) 0.038 (0.96) dia. case style 1.5ka
legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
